Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Deep-scaled CMOS technologies have provided ultra-high speed devices and enabled the possibility to achieve integrated millimeter wave and sub-millimeter wave systemon-a-chip (SoC). However, the drawbacks and constraints of deep-scaled technologies require not only creative circuit design ideas but also accurate active device models and optimum physical design. The paper presents a systematic design approach to optimize active device physical design and build the corresponding model, which is exemplified through two layout examples. With the optimum active device physical design and new circuit design ideas, we have successfully demonstrated several key circuits in mm-wave/sub-mm-wave frequency ranges: a 450 GHz voltage controlled oscillator, a 200 GHz frequency divider, and a 200 GHz amplifier all in 65 nm bulk CMOS technologies. The availability of these key building blocks would benefit the realization of mm-wave/sub-mmwave SoCs in the future.